Sensor for ambient pressure and material strains using a thin film bulk acoustic resonator

被引：0
|
作者：
Weber, J [1 ]
Link, M [1 ]
Primig, R [1 ]
Pitzer, D [1 ]
Schreiter, M [1 ]
机构：
[1] Siemens AG, Corp Technol, D-8000 Munich, Germany
来源：
2005 IEEE Ultrasonics Symposium, Vols 1-4 | 2005年
关键词：
FBAR; stress sensor; ZnO;
D O I：
暂无
中图分类号：
O42 [声学];
学科分类号：
070206 ; 082403 ;
摘要：
In this contribution we will outline concepts for the operation of a Thin Film Bulk Acoustic Resonator (FBAR) as a sensor for ambient pressure and material strains. We develop a model to evaluate its sensitivity. Measurements with an FBAR solidly mounted on a silicon Wafer show the principal suitability of this device as a stress sensor.
引用
收藏
页码：1258 / 1261
页数：4
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