Highly sensitive mass sensor using film bulk acoustic resonator

被引:62
|
作者
Lin, Re-Ching [2 ]
Chen, Ying-Chung [2 ]
Chang, Wei-Tsai [2 ]
Cheng, Chien-Chuan [3 ]
Kao, Kuo-Sheng [1 ]
机构
[1] Shu Te Univ, Dept Comp & Commun, Kaohsiung, Taiwan
[2] Natl Sun Yat Sen Univ, Dept Elect Engn, Kaohsiung, Taiwan
[3] De Lin Inst Technol, Dept Elect Engn, Taipei, Taiwan
关键词
mass sensor; ZnO; FBAR;
D O I
10.1016/j.sna.2008.05.011
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Film bulk acoustic resonators (FBAR) have recently been adopted as alternatives to surface acoustic wave (SAW) in high frequency devices, due to their inherent advantages, such as low insertion loss, high power handling capability and small size. FBAR device can also be one of the standard components as mass sensor applications. FBAR sensors have high sensitivity, good linearity, low hysteresis and wide adaptability. In this study, a highly sensitive mass sensor using film bulk acoustic resonator was developed. The device structure of FBAR is simulated and designed by the Mason model, and fabricated using micro electromechanical systems (MEMS) processes. The fabricated FBAR sensor exhibits a resonant frequency of 2442.188 MHz, measured using an HP8720 network analyzer and a CASCADE probe station. Experimental results indicate that the mass loading effects agree with the simulated ones. Results of this study demonstrate that the sensitivity of the device can be achieved as high as 3654 Hz cm(2)/ng. (C) 2008 Elsevier B.V. All rights reserved.
引用
收藏
页码:425 / 429
页数:5
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