GaAsSb bandgap, surface fermi level, and surface state density studied by photoreflectance modulation spectroscopy

被引：16
|
作者：
Hwang, J. S. [1 ]
Tsai, J. T. [1 ]
Su, I. C. [1 ]
Lin, H. C. [1 ]
Lu, Y. T. [1 ]
Chiu, P. C. [2 ]
Chyi, J. I. [2 ]
机构：
[1] Natl Cheng Kung Univ, Dept Phys, Tainan 70101, Taiwan
[2] Natl Cent Univ, Dept Elect Engn, Chungli 32054, Taiwan
来源：
APPLIED PHYSICS LETTERS | 2012年 / 100卷 / 22期
关键词：
INALAS; RAMAN;
D O I：
10.1063/1.4724097
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The bandgap, surface Fermi level, and surface state density of a series of GaAs1-xSbx surface intrinsic-n(+) structures with GaAs as substrate are determined for various Sb mole fractions x by the photoreflectance modulation spectroscopy. The dependence of the bandgap on the mole composition x is in good agreement with previous measurements as well as predictions calculated using the dielectric model of Van Vechten and Bergstresser in Phys. Rev. B 1, 3551 (1970). For a particular composition x, the surface Fermi level is always strongly pinned within the bandgap of GaAs1-xSbx and we find its variation with composition x is well described by a function E-F = 0.70 - 0.192 x for 0 <= x <= 0.35, a result which is notably different from that reported by Chouaib et al. [Appl. Phys. Lett. 93, 041913 (2008)]. Our results suggest that the surface Fermi level is pinned at the midgap of GaAs and near the valence band of the GaSb. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4724097]
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页数：4
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