Time domain analysis of traps generated random telegraph signal in (SWCNT) based sensors

被引：3
|
作者：
Troudi, M. [1 ]
Bergaoui, Y. [2 ]
Bondavalli, P. [3 ]
Sghaier, N. [1 ,2 ]
机构：
[1] Univ Monastir, Fac Sci Monastir, Lab Microelect & Instrumentat LR13ES12, Ave Environm, Monastir 5019, Tunisia
[2] Univ Carthage, Equipe Composants Elect UR11ES89, IPEIN, Merazka 8000, Nabeul, Tunisia
[3] Thales Res & Technol, Lab Chim & Mat Fonct, F-91767 Palaiseau, France
来源：
SENSORS AND ACTUATORS A-PHYSICAL | 2016年 / 252卷
关键词：
Single wall carbon nanotubes; RTS noise; Traps; Interface CNT/SiO2; Sensors; CARBON NANOTUBES; ELASTIC PROPERTIES; 1/F NOISE; GAS; ADSORPTION; ENSEMBLES;
D O I：
10.1016/j.sna.2016.10.031
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, we analyzed single wall carbon nanotubes (SWCNT) gas detectors. The relationship between excitation signal (voltage) and random-telegraph-signal (RTS) was highlighted. We demonstrated that induced RTS observed on SWCNTs based detectors is mainly due to the interaction between single generated charges that tunnel from trap to trap and SWCNT/SiO2 interface. Based on RTS analysis for various temperatures and gate bias, we determined the characteristics of these single generated traps: the energy position (E-T similar to 0.38 eV) within the silicon bandgap, capture cross section (sigma similar to 10(-17) cm(2)) and the position within the CNT/SiO2 interface (X-Trap approximate to 0.3 nm). These informations will strongly help us into optimizing the fabrication process and to deeply understand some unknown physics effect of these extremely promising devices. (C) 2016 Elsevier B.V. All rights reserved.
引用
收藏
页码：185 / 189
页数：5
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