An ultra-wideband low power consumption differential low noise amplifier in SiGe:C BiCMOS technology

被引：3

作者：

Datta, PK ^{[1
]}

Fischer, G ^{[1
]}

机构：

[1] IHP Microelect, D-15236 Frankfurt, Oder, Germany

来源：

2006 IEEE RADIO AND WIRELESS SYMPOSIUM, PROCEEDINGS | 2006年

关键词：

D O I：

10.1109/RWS.2006.1615106

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A differential low noise amplifier (LNA) for ultra-wideband (UWB) applications is presented. The LNA has a -3 dB bandwidth of more than 2 to 1.2 GHz. The maximum gain is 14-5 dB with a fairly flat characteristics In the UWB frequency range of 3.1 to 10.6 GHz The gain ripple is less than 1.3 dB. Good impedance matching is obtained with vertical bar S-11 vertical bar below -6.7 dB and vertical bar S-22 vertical bar below -7.1 dB in the whole UWB range. The LNA consumes quite low dc power. The current consumption is 6.5 mA from a 2.5 V supply. The noise figure of the LNA is 3.9 dB to 53 dB in the whole UWB range. The input referred third-order intercept point IIP3 is -7.1 dBm and I dB compression point P-1dB is -16.6 dBm measured at 7 GHz. This LNA is fully integrated and occupies a chip area of 0.9 mm(2) including pads.

引用

页码：107 / 110

页数：4

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