Nucleation of diamond films by ECR-enhanced microwave plasma chemical vapor deposition

被引：7
|
作者：
Sun, C
Zhang, WJ [1 ]
Lee, CS
Bello, I
Lee, ST
机构：
[1] City Univ Hong Kong, Ctr Super Diamond & Adv Films, Tat Chee Ave, Kowloon, Peoples R China
[2] City Univ Hong Kong, Dept Phys & Mat Sci, Kowloon, Peoples R China
来源：
DIAMOND AND RELATED MATERIALS | 1999年 / 8卷 / 8-9期
关键词：
cyclotron resonance; diamond films; heteroepitaxy; nucleation;
D O I：
10.1016/S0925-9635(99)00011-4
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
A novel nucleation technique based on electron cyclotron resonance microwave plasma was developed to enhance the nucleation of diamond. By choosing a suitable experimental condition, a nucleation density higher than 10(8) nuclei cm(-2) was achieved on an untreated, mirror-polished silicon substrate. Uniform diamond films were obtained by combining this nucleation method with subsequent growth by the common microwave plasma chemical vapor deposition. Furthermore, the possibility of this new nucleation method to generate heteroepitaxial diamond nuclei on (001) silicon substrates was explored. (C) 1999 Elsevier Science S.A. All rights reserved.
引用
收藏
页码：1410 / 1413
页数：4
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