Characterization at the nanometer scale of local electron beam irradiation of CNT based devices

被引：7
|
作者：
Rius, G. [1 ]
Verdaguer, A. [2 ]
Chaves, F. A. [3 ]
Martin, I. [1 ]
Godignon, P. [1 ]
Lora-Tamayo, E. [1 ]
Jimenez, D. [3 ]
Perez-Murano, F. [1 ]
机构：
[1] CNM CSIC, IMB, E-08193 Bellaterra, Spain
[2] ICN, E-08193 Bellaterra, Spain
[3] UAB, ETSE, E-08193 Bellaterra, Spain
来源：
MICROELECTRONIC ENGINEERING | 2008年 / 85卷 / 5-6期
关键词：
carbon nanotube; electron beam lithography; AFM; nanodevice simulation;
D O I：
10.1016/j.mee.2007.12.014
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We report on the specialised characterization of the local electron beam irradiation of carbon nanotube (CNT) based devices motivated by previous studies on device electrical characteristics. In particular, Kelvin probe force microscopy provides surface potential description of the device under exposure. The experimental characterization is complemented with 3-dimensional electric field modelling of the devices using finite element methods. The modelling includes the effect of electron charging and AFM tip potential. Comparison of simulation and experiments shows good agreement and contributes to assess the distortion of electrical characteristics of CNT based devices under electron beam irradiation. (c) 2007 Elsevier B.V. All rights reserved.
引用
收藏
页码：1413 / 1416
页数：4
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