Excitonic diffusion dynamics in ZnO

被引：12
|
作者：
Jeong, H. [1 ]
Min, K. [1 ]
Byun, S. [1 ]
Stanton, C. J. [2 ]
Reitze, D. H. [2 ]
Yoo, J. K. [3 ]
Yi, G. C. [3 ]
Jho, Y. D. [1 ]
机构：
[1] Gwangju Inst Sci & Technol, Sch Informat & Commun, Kwangju 500712, South Korea
[2] Univ Florida, Dept Phys, Gainesville, FL 32611 USA
[3] Seoul Natl Univ, Sch Phys & Astron, Seoul 151742, South Korea
来源：
APPLIED PHYSICS LETTERS | 2012年 / 100卷 / 09期
基金：
美国国家科学基金会;
关键词：
diffusion; excitons; II-VI semiconductors; nanorods; reflectivity; time resolved spectra; wide band gap semiconductors; zinc compounds; NANORODS; GROWTH; LASERS; GE;
D O I：
10.1063/1.3690055
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We investigate excitonic carrier diffusion in both bulk ZnO and nanorods (NRs). Using time-resolved differential reflectivity spectroscopy, we observe a fast decaying component together with a longer exponential relaxation. In bulk ZnO, we find that the fast decay term (similar to 1 ps) originates from excitonic diffusion along the growth direction. By probing at both the A and B excitons, we find different diffusion coefficients for each. In ZnO nanorods, the diffusion contribution is missing. We attribute this to two effects: (1) defects in the nanorods substantially slow the diffusion process and (2) excitons in nanorods are generated more uniformly than in bulk. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.3690055]
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页数：3
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