Excitonic diffusion dynamics in ZnO

被引：12
|
作者：
Jeong, H. [1 ]
Min, K. [1 ]
Byun, S. [1 ]
Stanton, C. J. [2 ]
Reitze, D. H. [2 ]
Yoo, J. K. [3 ]
Yi, G. C. [3 ]
Jho, Y. D. [1 ]
机构：
[1] Gwangju Inst Sci & Technol, Sch Informat & Commun, Kwangju 500712, South Korea
[2] Univ Florida, Dept Phys, Gainesville, FL 32611 USA
[3] Seoul Natl Univ, Sch Phys & Astron, Seoul 151742, South Korea
来源：
APPLIED PHYSICS LETTERS | 2012年 / 100卷 / 09期
基金：
美国国家科学基金会;
关键词：
diffusion; excitons; II-VI semiconductors; nanorods; reflectivity; time resolved spectra; wide band gap semiconductors; zinc compounds; NANORODS; GROWTH; LASERS; GE;
D O I：
10.1063/1.3690055
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We investigate excitonic carrier diffusion in both bulk ZnO and nanorods (NRs). Using time-resolved differential reflectivity spectroscopy, we observe a fast decaying component together with a longer exponential relaxation. In bulk ZnO, we find that the fast decay term (similar to 1 ps) originates from excitonic diffusion along the growth direction. By probing at both the A and B excitons, we find different diffusion coefficients for each. In ZnO nanorods, the diffusion contribution is missing. We attribute this to two effects: (1) defects in the nanorods substantially slow the diffusion process and (2) excitons in nanorods are generated more uniformly than in bulk. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.3690055]
引用
收藏
页数：3
相关论文
共 50 条
  • [1] Intra-excitonic relaxation dynamics in ZnO
    Chernikov, Alexej
    Koch, Martin
    Laumer, Bernhard
    Wassner, Thomas A.
    Eickhoff, Martin
    Koch, Stephan W.
    Chatterjee, Sangam
    APPLIED PHYSICS LETTERS, 2011, 99 (23)
  • [2] Surface excitonic recombination dynamics in ZnO nanowires
    Richters, Jan-Peter
    Wischmeier, Lars
    Rueckmann, Ilja
    Gutowski, Juergen
    Voss, Tobias
    PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, NO 2, 2009, 6 (02): : 560 - 563
  • [3] Dynamics of surface-excitonic emission in ZnO nanowires
    Wischmeier, L.
    Voss, T.
    Rueckmann, I.
    Gutowski, J.
    Mofor, A. C.
    Bakin, A.
    Waag, A.
    PHYSICAL REVIEW B, 2006, 74 (19)
  • [4] Excitonic Transport in ZnO
    Noltemeyer, Martin
    Bertram, Frank
    Hempel, Thomas
    Bastek, Barbara
    Christen, Juergen
    Brandt, Matthias
    Lorenz, Michael
    Grundmann, Marius
    OXIDE-BASED MATERIALS AND DEVICES III, 2012, 8263
  • [5] Excitonic transport in ZnO
    Noltemeyer, Martin
    Bertram, Frank
    Hempel, Thomas
    Bastek, Barbara
    Polyakov, Andrey
    Christen, Juergen
    Brandt, Matthias
    Lorenz, Michael
    Grundmann, Marius
    JOURNAL OF MATERIALS RESEARCH, 2012, 27 (17) : 2225 - 2231
  • [6] Excitonic transition dynamics on front and back surfaces of ZnO thin films
    Lee, Sun-Kyun
    Kwon, Bong-Joon
    Cho, Yong-Hoon
    Ko, Hang-Ju
    Yao, Takafumi
    PHYSICAL REVIEW B, 2011, 84 (20)
  • [7] Excitonic transport in ZnO
    Martin Noltemeyer
    Frank Bertram
    Thomas Hempel
    Barbara Bastek
    Andrey Polyakov
    Juergen Christen
    Matthias Brandt
    Michael Lorenz
    Marius Grundmann
    Journal of Materials Research, 2012, 27 : 2225 - 2231
  • [8] Excitonic properties of ZnO
    Klingshirn, C
    Priller, H
    Decker, M
    Brückner, J
    Kalt, H
    Hauschild, R
    Zeller, J
    Waag, A
    Bakin, A
    Wehmann, H
    Thonke, K
    Sauer, R
    Kling, R
    Reuss, F
    Kirchner, C
    ADVANCES IN SOLID STATE PHYSICS 45, 2005, 45 : 275 - 287
  • [9] Recombination dynamics of surface-related excitonic states in single ZnO nanowires
    Voss, Tobias
    Wischmeier, Lars
    JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2008, 8 (01) : 228 - 232
  • [10] Effects of excitonic diffusion on stimulated emission in nanocrystalline ZnO - art. no. 071919
    Tobin, G
    McGlynn, E
    Henry, MO
    Mosnier, JP
    de Posada, E
    Lunney, JG
    APPLIED PHYSICS LETTERS, 2006, 88 (07)
12345