Modification of Schottky Barrier Properties of Ti/p-type InP Schottky Diode by Polyaniline (PANI) Organic Interlayer

被引：24

作者：

Reddy, P. R. Sekhar ^{[1
]}

Janardhanam, V. ^{[1
]}

Jyothi, I. ^{[1
]}

Yuk, Shim-Hoon ^{[1
]}

Reddy, V. Rajagopal ^{[2
]}

Jeong, Jae-Chan ^{[3
]}

Lee, Sung-Nam ^{[4
]}

Choi, Chel-Jong ^{[1
]}

机构：

[1] Chonbuk Natl Univ, Semicond Phys Res Ctr, Sch Semicond & Chem Engn, Jeonju 561756, South Korea

[2] Sri Venkateswara Univ, Dept Phys, Tirupati 517502, Andhra Pradesh, India

[3] Elect & Telecommun Res Inst, Daejeon 305700, South Korea

[4] Korea Polytech Univ, Dept Nanoopt Engn, Shihung 429793, South Korea

来源：

JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE | 2016年 / 16卷 / 05期

基金：

新加坡国家研究基金会;

关键词：

Schottky diode; PANI; InP; barrier height; interface state density; ELECTRICAL-PROPERTIES; CURRENT-VOLTAGE; TEMPERATURE; CONTACTS; DEFECTS; HEIGHTS; LAYER;

D O I：

10.5573/JSTS.2016.16.5.664

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The electrical properties of Ti/p-type InP Schottky diodes with and without polyaniline (PANI) interlayer was investigated using current-voltage (IV) and capacitance-voltage (C-V) measurements. The barrier height of Ti/p-type InP Schottky diode with PANI interlayer was higher than that of the conventional Ti/p-type InP Schottky diode, implying that the organic interlayer influenced the spacecharge region of the Ti/p-type InP Schottky junction. At higher voltages, the current transport was dominated by the trap free space-charge-limited current and trap-filled space-charge-limited current in Ti/p-type InP Schottky diode without and with PANI interlayer, respectively. The domination of trap filled space-charge-limited current in Ti/p-type InP Schottky diode with PANI interlayer could be associated with the traps originated from structural defects prevailing in organic PANI interlayer.

引用

页码：664 / 674

页数：11

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