Modification of Schottky Barrier Properties of Ti/p-type InP Schottky Diode by Polyaniline (PANI) Organic Interlayer

被引：24
|
作者：
Reddy, P. R. Sekhar [1 ]
Janardhanam, V. [1 ]
Jyothi, I. [1 ]
Yuk, Shim-Hoon [1 ]
Reddy, V. Rajagopal [2 ]
Jeong, Jae-Chan [3 ]
Lee, Sung-Nam [4 ]
Choi, Chel-Jong [1 ]
机构：
[1] Chonbuk Natl Univ, Semicond Phys Res Ctr, Sch Semicond & Chem Engn, Jeonju 561756, South Korea
[2] Sri Venkateswara Univ, Dept Phys, Tirupati 517502, Andhra Pradesh, India
[3] Elect & Telecommun Res Inst, Daejeon 305700, South Korea
[4] Korea Polytech Univ, Dept Nanoopt Engn, Shihung 429793, South Korea
来源：
JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE | 2016年 / 16卷 / 05期
基金：
新加坡国家研究基金会;
关键词：
Schottky diode; PANI; InP; barrier height; interface state density; ELECTRICAL-PROPERTIES; CURRENT-VOLTAGE; TEMPERATURE; CONTACTS; DEFECTS; HEIGHTS; LAYER;
D O I：
10.5573/JSTS.2016.16.5.664
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The electrical properties of Ti/p-type InP Schottky diodes with and without polyaniline (PANI) interlayer was investigated using current-voltage (IV) and capacitance-voltage (C-V) measurements. The barrier height of Ti/p-type InP Schottky diode with PANI interlayer was higher than that of the conventional Ti/p-type InP Schottky diode, implying that the organic interlayer influenced the spacecharge region of the Ti/p-type InP Schottky junction. At higher voltages, the current transport was dominated by the trap free space-charge-limited current and trap-filled space-charge-limited current in Ti/p-type InP Schottky diode without and with PANI interlayer, respectively. The domination of trap filled space-charge-limited current in Ti/p-type InP Schottky diode with PANI interlayer could be associated with the traps originated from structural defects prevailing in organic PANI interlayer.
引用
收藏
页码：664 / 674
页数：11
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