Crystallization of Amorphous Silicon Films by High-Frequency Tapping of Molten Silicon Using Piezo Actuator

被引：0

作者：

Akazawa, Muneki ^{[1
]}

Zhou, Yuan ^{[1
]}

Sakaike, Kohei ^{[1
]}

Hayashi, Shohei ^{[1
]}

Hanafusa, Hiroaki ^{[1
]}

Higashi, Seiichiro ^{[1
]}

机构：

[1] Hiroshima Univ, Dept Semicond Elect & Integrat Sci, Grad Sch Adv Sci Matter, Hiroshima 7398530, Japan

来源：

2012 19TH INTERNATIONAL WORKSHOP ON ACTIVE-MATRIX FLATPANEL DISPLAYS AND DEVICES (AM-FPD): TFT TECHNOLOGIES AND FPD MATERIALS | 2012年

关键词：

POLY-SI TFTS; DEPOSITION;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have proposed crystallizaiton technique of amorphous Si films by moleten Si contacting method using piezo actuator, and observed continuous crystallization of amorphous Si by tapping of molten Si during substrate scanning. Under a condition of 88 % duty ratio of the voltage applied to piezo actuator and scanning speed 100 mm/s, we succeeded in continuous crystallization of amorphous Si under maximum piezo frequency of 1 kHz. From the results of two-dimension thermal diffusion simulation, we concluded that the phase transformation occurred via solid phase crystallization of a-Si.

引用

页码：215 / 218

页数：4

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