Ultra-low temperature poly-Si thin film transistor for plastic substrate

被引：0

作者：

Kim, DY ^{[1
]}

Kwon, JY

Jung, JS

Park, KB

Cho, HS

Lim, H

Kim, JM

Yin, HX

Zhang, XX

Noguchi, T

机构：

[1] Samsung Adv Inst Technol, Kyunggido 440712, South Korea

[2] Sungkyunkwan Univ, Kyunggido 440746, South Korea

来源：

JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 2006年 / 48卷

关键词：

sputtering; crystallization; poly-Si TFT;

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We studied the fabrication of poly-Si TFT (thin film transistor) by using excimer laser crystallization of sputtered a-Si film at below 200 degrees C. We could obtain the precursor a-Si film with low impurity gas content of 0.39 % by using Xe sputtering and poly-Si film with maximum grain size of 1 mu m. We successfully fabricated poly-Si TFT with a field-effect mobility of 70 cm(2)/V-sec on glass and 15 cm(2)/V.sec on plastic by using ultra low temperature process at below 200 degrees C, respectively.

引用

页码：S61 / S63

页数：3

共 50 条

[21] Remarkable Improvement in Foldability of Poly-Si Thin-Film Transistor on Polyimide Substrate Using Blue Laser Crystallization of Amorphous Si and Comparison with Conventional Poly-Si Thin-Film Transistor Used for Foldable Displays
Do, Youngbin
Jeong, Duk Young
Lee, Suhui
Kang, Seongbok
Jang, Seonhyang
Jang, Jin
ADVANCED ENGINEERING MATERIALS, 2020, 22 (05)
[22] Low-temperature and low-cost excimer laser doping for poly-Si thin-film transistor fabrication
Imokawa, Kaname
Tanaka, Nozomu
Suwa, Akira
Nakamura, Daisuke
Sadoh, Taizoh
Goto, Tetsuya
Ikenoue, Hiroshi
LASER-BASED MICRO- AND NANOPROCESSING XIII, 2019, 10906
[23] Ultra-Low Power, Emission Gate Driver With Pulse Width Modulation Using Low-Temperature Poly-Si Oxide Thin-Film Transistors
Kim, Junyeong
Billah, Mohammad Masum
Jang, Jin
IEEE ELECTRON DEVICE LETTERS, 2022, 43 (02) : 236 - 239
[24] A Novel Poly-Si Thin Film Transistor with ONO Offset structure
Liou, Kun-Ye
Chien, Feng-Tso
2014 21ST INTERNATIONAL WORKSHOP ON ACTIVE-MATRIX FLATPANEL DISPLAYS AND DEVICES (AM-FPD), 2014, : 161 - 163
[25] CHARACTERIZATION OF LOW-TEMPERATURE POLY-SI THIN-FILM TRANSISTORS
BROTHERTON, SD
AYRES, JR
YOUNG, ND
SOLID-STATE ELECTRONICS, 1991, 34 (07) : 671 - 679
[26] FABRICATION OF A POLY-SI THIN-FILM TRANSISTOR WITH STORAGE CAPACITOR
MIMURA, A
KIMURA, E
SUZUKI, T
ONO, K
OHWADA, JI
KONISHI, N
MIYATA, K
DISPLAYS, 1991, 12 (3-4) : 141 - 146
[27] Reliability of low-temperature poly-Si thin-film transistors
Inoue, Y
Ogawa, H
Endo, T
Yano, H
Hatayama, T
Uraoka, Y
Fuyuki, T
POLYCRYSTALLINE SEMICONDUCTORS VII, PROCEEDINGS, 2003, 93 : 43 - 47
[28] Technology demonstration of a novel poly-Si nanowire thin film transistor
Liu, Libin
Liang, Renrong
Shan, Bolin
Xu, Jun
Wang, Jing
CHINESE PHYSICS B, 2016, 25 (11)
[29] Technology demonstration of a novel poly-Si nanowire thin film transistor
刘立滨
梁仁荣
单柏霖
许军
王敬
Chinese Physics B, 2016, (11) : 660 - 665
[30] High temperature crystallized poly-Si on molybdenum substrates for thin-film transistor application
Park, JH
Kim, DY
Ko, JK
Yi, JS
POLYCRYSTALLINE SEMICONDUCTORS VII, PROCEEDINGS, 2003, 93 : 13 - 17

← 1 2 3 4 5 →