Ultra-low temperature poly-Si thin film transistor for plastic substrate

被引：0
|
作者：
Kim, DY [1 ]
Kwon, JY
Jung, JS
Park, KB
Cho, HS
Lim, H
Kim, JM
Yin, HX
Zhang, XX
Noguchi, T
Noguchi, T
机构：
[1] Samsung Adv Inst Technol, Kyunggido 440712, South Korea
[2] Sungkyunkwan Univ, Kyunggido 440746, South Korea
来源：
JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 2006年 / 48卷
关键词：
sputtering; crystallization; poly-Si TFT;
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
We studied the fabrication of poly-Si TFT (thin film transistor) by using excimer laser crystallization of sputtered a-Si film at below 200 degrees C. We could obtain the precursor a-Si film with low impurity gas content of 0.39 % by using Xe sputtering and poly-Si film with maximum grain size of 1 mu m. We successfully fabricated poly-Si TFT with a field-effect mobility of 70 cm(2)/V-sec on glass and 15 cm(2)/V.sec on plastic by using ultra low temperature process at below 200 degrees C, respectively.
引用
收藏
页码：S61 / S63
页数：3
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