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Oxygen effect on microstructure and stability of BaAl2S4:Eu phosphor in TDEL display devices
被引:0
|作者:
Yu, San
[1
]
Acchione, Joe
[1
]
机构:
[1] iFire Technol Corp, Toronto, ON M9W 5A5, Canada
关键词:
D O I:
暂无
中图分类号:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号:
0808 ;
0809 ;
摘要:
The oxygen effect on BaAl2S4:Eu phosphor microstructure has been revealed by Transmission Electron Microscopy (TEM) analyses. Oxidation driven aluminum segregation caused the inhomogeneous phosphor film microstructure and stacking faults in the phosphor. Stable and high efficient BaAl2S4:Eu phosphor in TDEL deices have been achieved by optimizing oxidation during phosphor process which reduces the defects level and eliminate the segregation of aluminum at the lower interface between phosphor and lower dielectric.
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页码:1211 / 1212
页数:2
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