Co-doped phosphorene: Enhanced sensitivity of CO gas sensing

被引:9
|
作者
Lei, S. Y. [1 ]
Luan, S. [1 ]
Yu, H. [1 ]
机构
[1] Southeast Univ, Minist Educ, Key Lab Microelectromech Syst, Nanjing 210096, Jiangsu, Peoples R China
来源
基金
美国国家科学基金会; 中国国家自然科学基金;
关键词
Co-doped phosphorene; bandgap; direct-to-indirect transition; gas sensing; TOTAL-ENERGY CALCULATIONS; MOLECULES; MOS2; NANORIBBONS; ADSORPTION; HOLE;
D O I
10.1142/S0217979218500686
中图分类号
O59 [应用物理学];
学科分类号
摘要
First-principle calculation was carried out to systematically investigate carbon monoxide (CO) adsorption on pristine and cobalt (Co)-doped phosphorenes (Co-bP). Whether or not CO is adsorped, pristine phosphorene is a direct-band-gap semiconductor. However, the bandgap of Co-bP experiences direct-to-indirect transition after CO molecule adsorption, which will affect optical absorption considerably, implying that Co doping can enhance the sensitivity of phosphorene as a CO gas sensor. Moreover, Co doping can improve an adsorption energy of CO to 1.31 eV, as compared with pristine phosphorene (0.12 eV), also indicating that Co-bP is energetically favorable for CO gas sensing.
引用
收藏
页数:9
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