Low-voltage bulk-driven self-biased cascode current mirror with bandwidth enhancement

被引：30
|
作者：
Raj, N. [1 ]
Singh, A. K. [2 ]
Gupta, A. K. [1 ]
机构：
[1] NIT Kurukshetra, ECE Dept, Kurukshetra, Haryana, India
[2] Curtin Univ, ECE Dept, Miri, Sarawak, Malaysia
来源：
ELECTRONICS LETTERS | 2014年 / 50卷 / 01期
关键词：
current mirrors; MOSFET circuits; bulk-driven technique; quasi-floating gate metal-oxide semiconductor transistors; small-signal analysis; UMC technology node; HSpice; low-voltage bulk-driven self-biased cascode current mirror; bandwidth enhancement; size; 0; 18; mum; DESIGN;
D O I：
10.1049/el.2013.3600
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A low-voltage, high-performance, self-biased, cascode bulk-driven current mirror is proposed. Using the bulk-driven technique together with quasi-floating gate metal-oxide semiconductor transistors improves the overall circuit performance. A small-signal analysis validates the advantage of such an approach over conventional bulk-driven circuits. The proposed circuit has four times smaller input resistance and extended bandwidth by about three times over the same configuration using the conventional bulk mechanism. The circuit is simulated on UMC 0.18 m technology node with the help of HSpice.
引用
收藏
页码：23 / 24
页数：2
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