Thermal stability of stacked self-assembled InP quantum dots in GaInP

被引：10
|
作者：
Jin-Phillipp, NY
Du, K
Phillipp, F
Zundel, M
Eberl, K
机构：
[1] Max Planck Inst Festkorperforsch, D-70569 Stuttgart, Germany
[2] Max Planck Inst Met Res, D-70569 Stuttgart, Germany
来源：
JOURNAL OF APPLIED PHYSICS | 2002年 / 91卷 / 05期
关键词：
D O I：
10.1063/1.1446656
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Thermal stability of stacked self-assembled InP quantum dots (QDs) embedded in Ga0.51In0.49P (GaInP) under ex situ rapid thermal annealing (RTA) is studied by photoluminescence spectroscopy and quantitative high-resolution electron microscopy. It is found that InP QDs intermix with surrounding GaInP, and that this is enhanced with increasing temperature and duration of RTA. The preferential direction of the intermixing and reshaping of the QDs changes at different stages of RTA. This anisotropy is attributed to strain-assisted interdiffusion, and is expected in stacked QDs of other material systems. (C) 2002 American Institute of Physics.
引用
收藏
页码：3255 / 3260
页数：6
相关论文
共 50 条
  • [41] Electrical properties of self-assembled InAs/InAlAs quantum dots on InP
    Hamdaoui, N.
    Ajjel, R.
    Maaref, H.
    Salem, B.
    Bremond, G.
    Gendry, M.
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2010, 25 (06)
  • [42] Self-assembled InAs quantum dots on InP nano-templates
    Lefebvre, J
    Poole, PJ
    Fraser, J
    Aers, GC
    Chithrani, D
    Williams, RL
    JOURNAL OF CRYSTAL GROWTH, 2002, 234 (2-3) : 391 - 398
  • [43] Interaction of self-assembled InAs/InGaAsP/InP (001) quantum dots
    Chen, Xinyu
    Xiong, Yiling
    Zhang, Xiupu
    OPTICS COMMUNICATIONS, 2018, 429 : 18 - 28
  • [44] Growth kinetics effects on self-assembled InAs/InP quantum dots
    Bansal, B
    Gokhale, MR
    Bhattacharya, A
    Arora, BM
    APPLIED PHYSICS LETTERS, 2005, 87 (20) : 1 - 3
  • [45] Self-assembled quantum dots
    Univ of Nottingham, Nottingham, United Kingdom
    III Vs Rev, 3 (25-30):
  • [46] InP quantum dots in GaInP
    Pistol, ME
    JOURNAL OF PHYSICS-CONDENSED MATTER, 2004, 16 (35) : S3737 - S3748
  • [47] Highly uniform and small InP/GaInP self-assembled quantum dots grown by metal-organic vapor phase epitaxy
    Ren, HW
    Sugisaki, M
    Lee, JS
    Sugou, S
    Masumoto, Y
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1999, 38 (1B): : 507 - 510
  • [48] Magneto-optical study of electron occupation and hole wave functions in stacked self-assembled InP quantum dots
    Hayne, M
    Maes, J
    Moshchalkov, VV
    Manz, YM
    Schmidt, OG
    Eberl, K
    APPLIED PHYSICS LETTERS, 2001, 79 (01) : 45 - 47
  • [49] Transformation of self-assembled InAs/InP quantum dots into quantum rings without capping
    Sormunen, J
    Riikonen, J
    Mattila, M
    Tiilikainen, J
    Sopanen, M
    Lipsanen, H
    NANO LETTERS, 2005, 5 (08) : 1541 - 1543
  • [50] Self-assembled InAs/InP quantum dots transform into quantum rings without capping
    Ranjan, V
    MRS BULLETIN, 2005, 30 (10) : 686 - 686
12345