GaN-Based Light-Emitting Diodes Grown on Photonic Crystal-Patterned Sapphire Substrates by Nanosphere Lithography

被引：37
|
作者：
Su, Yan-Kuin [1 ,2 ]
Chen, Jian-Jhong [1 ,2 ]
Lin, Chuing-Liang [4 ]
Chen, Shi-Ming [4 ]
Li, Wen-Liang [3 ]
Kao, Chien-Chih [5 ]
机构：
[1] Natl Cheng Kung Univ, Inst Microelect, Tainan 701, Taiwan
[2] Natl Cheng Kung Univ, Dept Elect Engn, Tainan 701, Taiwan
[3] Natl Cheng Kung Univ, Adv Optoelect Technol Ctr, Tainan 701, Taiwan
[4] Kun Shan Univ, Dept Elect Engn, Tainan 710, Taiwan
[5] Natl Cheng Kung Univ, Inst Electroopt Sci & Engn, Tainan 701, Taiwan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 2008年 / 47卷 / 08期
关键词：
GaN; light-emitting diode (LED); photonic crystal; patterned sapphire substrate; nanosphere lithography;
D O I：
10.1143/JJAP.47.6706
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
GaN-based light-emitting diodes (LEDs) grown on photonic crystal-patterned sapphire substrates (PCPSS) have been demonstrated. PCPSS was fabricated by nanosphere lithography, and the photonic crystal structure was the hexagonal-lattice pattern. The forward voltages of PCPSS and patterned sapphire substrates (PSS) LEDs were smaller than that of conventional sapphire substrates (CSS) LED, and it infers the epitaxial film quality of PCPSS and PSS LEDs has been slightly improved. The luminance intensity of PCPSS LED was 1.63 and 1.51 times higher than those of CSS and PSS LED at 2.0 mA injection current. The enhancement in the luminance intensity of PCPSS LED is attributed to the photonic crystal structure.
引用
收藏
页码：6706 / 6708
页数：3
相关论文
共 50 条
  • [31] Efficiency Droop and Effective Active Volume in GaN-Based Light-Emitting Diodes Grown on Sapphire and Silicon Substrates
    Ryu, Han-Youl
    Ryu, Geun-Hwan
    Onwukaeme, Chibuzo
    [J]. APPLIED SCIENCES-BASEL, 2019, 9 (19):
  • [32] Performance investigation of GaN-based light-emitting diodes with tiny misorientation of sapphire substrates
    Liu, Yi-Jung
    Tsai, Tsung-Yuan
    Yen, Chih-Hung
    Chen, Li-Yang
    Tsai, Tsung-Han
    Huang, Chien-Chang
    Chen, Tai-You
    Hsu, Chi-Hsiang
    Liu, Wen-Chau
    [J]. OPTICS EXPRESS, 2010, 18 (03): : 2729 - 2742
  • [33] Effects of three-dimensional strain distribution on the performance of GaN-based light-emitting diodes on patterned sapphire substrates
    Chen, Shuo-Wei
    Li, Heng
    Chang, Chia-Jui
    Lu, Tien-Chang
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 2019, 58 (SC)
  • [34] GaN-based film-transferred light-emitting diodes with photonic crystal
    Lai, Chun-Feng
    Chi, Jim-Yong
    Chao, Chia-Hsin
    Lee, Chia-En
    Kuo, Hao-Chung
    Huang, Chen-Yang
    Yeh, Wen-Yung
    Lu, Tien-Chang
    [J]. 2009 CONFERENCE ON LASERS AND ELECTRO-OPTICS AND QUANTUM ELECTRONICS AND LASER SCIENCE CONFERENCE (CLEO/QELS 2009), VOLS 1-5, 2009, : 622 - +
  • [35] GaN-based light-emitting diodes directly grown on sapphire substrate with holographically generated two-dimensional photonic crystal patterns
    Lee, Joonhee
    Kim, Dong-Ho
    Kim, Jaehoon
    Jeon, Heonsu
    [J]. CURRENT APPLIED PHYSICS, 2009, 9 (03) : 633 - 635
  • [36] Improvement of Blue GaN-Based Light-Emitting Diodes with Nanosphere Layers
    Su, Y. K.
    Kao, C. C.
    Chen, J. J.
    Chuang, R. W.
    Lin, C. L.
    [J]. 2008 2ND IEEE INTERNATIONAL NANOELECTRONICS CONFERENCE, VOLS 1-3, 2008, : 214 - 216
  • [37] GaN-Based Light-Emitting Diodes on Selectively Grown Semipolar Crystal Facets
    Ferdinand Scholz
    Thomas Wunderer
    Barbara Neubert
    Martin Feneberg
    Klaus Thonke
    [J]. MRS Bulletin, 2009, 34 : 328 - 333
  • [38] GaN-Based Light-Emitting Diodes on Selectively Grown Semipolar Crystal Facets
    Scholz, Ferdinand
    Wunderer, Thomas
    Neubert, Barbara
    Feneberg, Martin
    Thonke, Klaus
    [J]. MRS BULLETIN, 2009, 34 (05) : 328 - 333
  • [39] Electrical characteristics of InGaN/GaN light-emitting diodes grown on GaN and sapphire substrates
    Cao, XA
    Teetsov, JM
    D'Evelyn, MP
    Merfeld, DW
    Yan, CH
    [J]. APPLIED PHYSICS LETTERS, 2004, 85 (01) : 7 - 9
  • [40] Comparison of high quality GaN-based light-emitting diodes grown on alumina-rich spinel and sapphire substrates
    Tinjod, Frank
    de Mierry, Philippe
    Lancefield, David
    Chenot, Sebastien
    Virey, Eric
    Stone-Sundberg, Jennifer L.
    Kokta, Milan R.
    Pauwels, Damien
    [J]. PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3, NO 6, 2006, 3 (06): : 2199 - 2202
12345