Submonolayer InAs Quantum Dots in Silicon grown by Molecular Beam Epitaxy

被引：0

作者：

Lendyashova, V. V. ^{[1
,2
]}

Ilkiv, I. V. ^{[1
]}

Borodin, B. R. ^{[3
]}

Ubyivovk, E. V. ^{[1
]}

Reznik, R. R. ^{[1
,2
,4
,5
]}

Talalaev, V. G. ^{[6
]}

Cirlin, G. E. ^{[1
,2
,4
,5
]}

机构：

[1] St Petersburg State Univ, St Petersburg, Russia

[2] Alferov Univ, St Petersburg, Russia

[3] Ioffe Phys Tech Inst RAS, St Petersburg, Russia

[4] ITMO Univ, St Petersburg, Russia

[5] Inst Analyt Instrumentat RAS, St Petersburg, Russia

[6] Martin Luther Univ Halle Wittenberg, Halle, Germany

来源：

ST PETERSBURG POLYTECHNIC UNIVERSITY JOURNAL-PHYSICS AND MATHEMATICS | 2022年 / 15卷 / 03期

基金：

俄罗斯科学基金会;

关键词：

quantum dots; semiconductors; molecular beam epitaxy; SI; LASERS; GAAS;

D O I：

10.18721/JPM.153.214

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The fabrication of composite material with embedded III-V quantum dots is of great interest due to promising silicon-based light emitting devices. In this work, the growth of self-assembled InAs quantum dots on Si substrates as well as subsequent capping layer for-mation by molecular beam epitaxy is presented. The evolution of size, density and shape of QDs are characterized by atomic-force microscopy. Bimodal size distribution of QDs at the submonolayer InAs coverage was observed. Full embedding into silicon matrix and dislocation free crystal structure of InAs QDs were confirmed by transmission electronic microscopy.

引用

页码：75 / 79

页数：5

共 50 条

[21] Stacked InAs self-assembled quantum dots on (001)GaAs grown by molecular beam epitaxy
Sugiyama, Y
Nakata, Y
Imamura, K
Muto, S
Yokoyama, N
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1996, 35 (2B): : 1320 - 1324
[22] Optical investigation of InAs/InP(100) quantum dots grown by gas source molecular beam epitaxy
Li, S. G.
Gong, Q.
Cao, C. F.
Wang, X. Z.
Yue, L.
Liu, Q. B.
Wang, H. L.
Wang, Y.
INFRARED PHYSICS & TECHNOLOGY, 2012, 55 (2-3) : 205 - 209
[23] Self-organized InAs/GaAs quantum dots grown by gas source molecular beam epitaxy
Chen, MC
Lin, HH
Shie, CW
JOURNAL OF APPLIED PHYSICS, 1998, 83 (06) : 3061 - 3064
[24] Ordered InAs quantum dots in InAlAs matrix on (001) InP substrates grown by molecular beam epitaxy
Li, HX
Wu, J
Xu, B
Liang, JB
Wang, ZG
APPLIED PHYSICS LETTERS, 1998, 72 (17) : 2123 - 2125
[25] Thermal annealing effect on InAs/InGaAs quantum dots grown by atomic layer molecular beam epitaxy
Shi, GX
Jin, P
Xu, B
Li, CM
Cui, CX
Wang, YL
Ye, XL
Wu, J
Wang, ZG
JOURNAL OF CRYSTAL GROWTH, 2004, 269 (2-4) : 181 - 186
[26] Piezoelectric InAs (211)B quantum dots grown by molecular beam epitaxy: Structural and optical properties
Dialynas, G. E.
Kalliakos, S.
Xenogianni, C.
Androulidaki, M.
Kehagias, T.
Komninou, P.
Savvidis, P. G.
Hatzopoulos, Z.
Pelekanos, N. T.
JOURNAL OF APPLIED PHYSICS, 2010, 108 (10)
[27] Optical characteristics of self-assembled InAs quantum dots with InGaAs grown by a molecular beam epitaxy
Kim, JS
Oh, DK
Yu, PW
Leem, JY
Lee, JI
Lee, CR
JOURNAL OF CRYSTAL GROWTH, 2004, 261 (01) : 38 - 43
[28] Formation and morphological evolution of InAs quantum dots grown by chemical beam epitaxy
Zribi, Jihene
Morris, Denis
Ares, Richard
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2012, 30 (05):
[29] Facet formation of uniform InAs quantum dots by molecular beam epitaxy
2002, The Japan Society of Applied Physics (Institute of Electrical and Electronics Engineers Inc., United States):
[30] Optical characterization of InAs quantum dots fabricated by molecular beam epitaxy
Saitoh, T
Takeuchi, H
Konda, J
Yoh, K
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1996, 35 (2B): : 1217 - 1220

← 1 2 3 4 5 →