Dislocation formation in trench-based Dynamic Random Access Memory (DRAM) chips

被引：0
|
作者：
Ho, H [1 ]
Hammerl, E [1 ]
Stengl, R [1 ]
Benedict, J [1 ]
机构：
[1] IBM CORP,E FISHKILL ADV SEMICOND RES & DEV CTR,HOPEWELL JCT,NY 12533
来源：
SURFACE/INTERFACE AND STRESS EFFECTS IN ELECTRONIC MATERIALS NANOSTRUCTURES | 1996年 / 405卷
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D O I：
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中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
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页码：459 / 466
页数：8
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