Low Chirp EMLs Fabricated By Combining SAG and Double Stack Active Layer Techniques

被引：9
|
作者：
Deng, Qiufang [1 ,2 ,3 ]
Zhu, Hongliang [1 ,2 ,3 ]
Xie, Xiao [1 ,2 ,3 ]
Guo, Lu [1 ,2 ,3 ]
Sun, Siwei [1 ,2 ,3 ]
Liang, Song [1 ,2 ,3 ]
Wang, Wei [1 ,2 ,3 ]
机构：
[1] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China
[2] Univ Chinese Acad Sci, Coll Mat Sci & Optoelect Technol, Beijing 100049, Peoples R China
[3] Beijing Key Lab Low Dimens Semicond Mat & Devices, Beijing 100083, Peoples R China
来源：
IEEE PHOTONICS JOURNAL | 2018年 / 10卷 / 02期
关键词：
Electroabsorption-modulated DFB lasers; low chirp parameters; low driving voltage; selective area growth; double stack active layer; LOW-DRIVING-VOLTAGE; DFB LASER; ELECTROABSORPTION MODULATOR; EADFB LASER; 40; GB/S;
D O I：
10.1109/JPHOT.2018.2812837
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We present electroabsorption modulators integrated with distributed feedback lasers (EMLs) fabricated by a simple method, which combines the advantages of the selective area growth and double stack active layer techniques. The obtained EML device has a threshold current as low as 16 mA and optical power of larger than 10 mW at 85 mA laser current. Quite low chirp parameter of the fabricated EMLs is obtained. Negative chirp parameters can be obtained at only about 0.5 V reverse bias voltage. Open eye diagrams are demonstrated from the EML at both 10 and 20 Gb/s modulations with the driving voltage of only 0.65 V while securing high dynamic extinction ratio. The exhibited performance makes our device a very promising candidate as a simple light source in long distance and cost sensitive applications.
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页数：7
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