Synthesis and transformations of Ti-containing structures on the surface of silica gel

被引:17
|
作者
Malkov, AA [1 ]
Sosnov, EA [1 ]
Osipenkova, OV [1 ]
Malygin, AA [1 ]
机构
[1] TECH UNIV,ST PETERSBURG STATE TECHNOL INST,ST PETERSBURG 198013,RUSSIA
基金
俄罗斯基础研究基金会;
关键词
chemisorption; TiCl4; hydrolysis; stability; Si-O-Ti bond;
D O I
10.1016/S0169-4332(96)00568-5
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The influence of pretreatment temperature (T-0) of the support (silica gel SchSK and KSS-4) and chemisorption temperature (T-s) on the composition of produced structures is examined by chemical analysis, gravimetric study, and IR-spectroscopy. During chemisorption at room temperature, -TiCl3 groups are formed (molar ratio is Cl/Ti approximate to 3). The rise of the temperature (T-s) from 25 to 600 degrees C with a step of 100 degrees is accompanied by a decrease in the Cl/Ti ratio to 1.67. This indicates the formation of =TiCl2 and =TiCl surface groups. The content of Ti chemisorbed at 25 degrees C is 0.67 mmol/g SiO2, and it increases to 0.75 mmol/g SiO2 at 200 degrees C, and then it is reduced to 0.49 mmol/g SiO2 at T-s=400-600 degrees C. Interactions between functional groups during the calcination process at temperatures above 100 degrees C are supposed. This causes the release of TiCl4 molecules in the gas phase and the increase of the number of (=Si-O)(n)TiCl4-n (n = 2, 3) groups. We suppose that the structure of Ti-oxochloride groups is the most important factor for the stability of the Si-O-Ti bonds at the stage of vapour hydrolysis. One of the most important reasons for bond destruction is HCl formed during the treatment of chlorine-containing structures by water vapour.
引用
收藏
页码:133 / 139
页数:7
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