SiGe HBT X-band and Ka-band Switchable Dual-Band Low Noise Amplifier

被引：0
|
作者：
Candra, Panglijen [1 ]
Xia, Tian [1 ]
机构：
[1] Univ Vermont, Sch Elect Engn, Burlington, VT 05405 USA
来源：
2016 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS (ISCAS) | 2016年
关键词：
LNA; Switch; Ka Band; X band; satellite communication; GHZ; DESIGN; MODEL;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper investigates a switchable dual-band low noise amplifier design that can operate at X-band and Ka-band using monolithic SiGe heterojunction bipolar transistors (HBT) technology. The LNA is based on a single stage cascade common emitter amplifier with emitter degeneration. Diode connected HBT switch with series-shunt configuration has been utilized for its excellent broadband switch characteristic encompassing X- to Ka-band frequency spectrum. The total switchable dual band LNA dimension is 1.05 x 0.98 mm(2), consuming 33 mA from 1.2 V supply (39 mW). To our knowledge, this paper is the first one to discuss feasibility of SiGe integrated switchable dual band LNA at X band and Ka band.
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页码：722 / 725
页数：4
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