Angular dependence of the Hall effect of La0.8Sr0.2MnO3 films

被引:8
|
作者
Naftalis, Netanel [1 ]
Haham, Noam [1 ]
Hoffman, Jason [2 ]
Marshall, Matthew S. J. [2 ]
Ahn, C. H. [2 ]
Klein, Lior [1 ]
机构
[1] Bar Ilan Univ, Inst Nanotechnol & Adv Mat, Dept Phys, Nanomagnetism Res Ctr, IL-52900 Ramat Gan, Israel
[2] Yale Univ, Dept Appl Phys, New Haven, CT 06520 USA
基金
以色列科学基金会;
关键词
COLOSSAL MAGNETORESISTANCE;
D O I
10.1103/PhysRevB.86.184402
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We find that the Hall effect resistivity (rho(xy)) of thin films of La0.8Sr0.2MnO3 varies as a function of the angle 0 between the applied magnetic field and the film normal as rho(xy) = a cos 0 + b cos 30, where vertical bar b vertical bar increases with increasing temperature and decreases with increasing magnetic field. We find that the angular dependence of the longitudinal resistivity and the magnetization cannot fully explain the surprising term b, suggesting it is a manifestation of an intrinsic transport property.
引用
收藏
页数:5
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