Base resistance variation of AlGaAs/GaAs HBT by He+ ion implantation

被引：0
|
作者：
Kim, IH [1 ]
机构：
[1] Chungju Natl Univ, Dept Mat Sci & Engn, Chungju 380702, Chungbuk, South Korea
来源：
MATERIALS LETTERS | 2001年 / 51卷 / 06期
关键词：
ion implantation; helium ion; gallium arsenide; heterojunction bipolar transistor;
D O I：
10.1016/S0167-577X(01)00350-0
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Reduction of base-collector junction capacitance has been intended by He+ ion implantation to enhance the maximum oscillation frequency of AlGaAs/GaAs heterojunction bipolar transistors (HBTs). From the recovery of the base resistance by rapid thermal annealing (RTA) after ion implantation, it is found that optimum conditions are 140 keV and 5 x 10(12)-1 x 10(13) cm(-2) for He+ ion implantation and 400 degreesC and 20 s for rapid thermal annealing. (C) 2001 Elsevier Science B.V. All rights reserved.
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页码：529 / 533
页数：5
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