Base resistance variation of AlGaAs/GaAs HBT by He+ ion implantation

被引：0
|
作者：
Kim, IH [1 ]
机构：
[1] Chungju Natl Univ, Dept Mat Sci & Engn, Chungju 380702, Chungbuk, South Korea
来源：
MATERIALS LETTERS | 2001年 / 51卷 / 06期
关键词：
ion implantation; helium ion; gallium arsenide; heterojunction bipolar transistor;
D O I：
10.1016/S0167-577X(01)00350-0
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Reduction of base-collector junction capacitance has been intended by He+ ion implantation to enhance the maximum oscillation frequency of AlGaAs/GaAs heterojunction bipolar transistors (HBTs). From the recovery of the base resistance by rapid thermal annealing (RTA) after ion implantation, it is found that optimum conditions are 140 keV and 5 x 10(12)-1 x 10(13) cm(-2) for He+ ion implantation and 400 degreesC and 20 s for rapid thermal annealing. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：529 / 533
页数：5
相关论文
共 50 条
  • [1] THz wave emission of GaAs induced by He+ ion implantation
    Yang, Kang
    Cao, Jianqing
    Huang, Can
    Ji, Te
    Zhang, Zengyan
    Liu, Qi
    Wu, Shengwei
    Lin, Jun
    Zhao, Hongwei
    Zhu, Zhiyong
    [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2013, 307 : 199 - 202
  • [2] A 45GHZ ALGAAS/GAAS HBT IC TECHNOLOGY WITHOUT ION-IMPLANTATION
    PRASAD, SJ
    VETANEN, B
    HAYNES, C
    PARK, S
    BEERS, I
    DIAMOND, S
    PUBANZ, G
    EBNER, J
    SANIELEVICI, S
    AGOSTON, A
    [J]. MICROELECTRONIC ENGINEERING, 1992, 19 (1-4) : 413 - 416
  • [3] PLANAR ALGAAS/GAAS HBT FABRICATED BY MOCVD OVERGROWTH WITH A GROWN BASE
    PLUMTON, DL
    YANG, JY
    MORRIS, FJ
    LAMBERT, SA
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1990, 37 (05) : 1187 - 1192
  • [4] LOCALIZATION AND INTERACTION EFFECTS IN GAAS/ALGAAS HETEROSTRUCTURES MODIFIED BY HE-4-ION IMPLANTATION
    TABORYSKI, R
    VEJE, E
    LINDELOF, PE
    [J]. SURFACE SCIENCE, 1990, 229 (1-3) : 105 - 109
  • [5] Modifications of polypropylene surface properties by He+ ion implantation
    Brun, C
    Fromm, M
    Berger, F
    Delobelle, P
    Takadoum, J
    Beche, E
    Chambaudet, A
    Jaffiol, F
    [J]. JOURNAL OF POLYMER SCIENCE PART B-POLYMER PHYSICS, 2003, 41 (11) : 1183 - 1191
  • [6] GAAS-ALGAAS HBT WITH CARBON DOPED BASE LAYER GROWN BY MOMBE
    REN, F
    ABERNATHY, CR
    PEARTON, SJ
    FULLOWAN, TR
    LOTHIAN, J
    JORDAN, AS
    [J]. ELECTRONICS LETTERS, 1990, 26 (11) : 724 - 725
  • [7] Role of neutral base recombination in high gain AlGaAs/GaAs HBT's
    Welser, RE
    Pan, NR
    Vu, DP
    Zampardi, PJ
    McDermott, BT
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1999, 46 (08) : 1599 - 1607
  • [8] Minimisation of base transit time in AlGaAs/GaAs heterostructure bipolar transistor (HBT)
    Zebda, Y
    Elnagar, A
    Hussein, A
    [J]. IEE PROCEEDINGS-CIRCUITS DEVICES AND SYSTEMS, 1997, 144 (06): : 375 - 377
  • [9] Beryllium ion implantation into GaAs and pseudomorphic AlGaAs/InGaAs/GaAs heterostructure
    Thiery, JF
    Fawaz, H
    Pesant, JC
    Linh, NT
    Salmer, G
    [J]. JOURNAL OF ELECTRONIC MATERIALS, 1997, 26 (01) : 16 - 20
  • [10] He+ ion implantation and electron irradiation effects on cathodoluminescence of plagioclase
    Masahiro Kayama
    Hirotsugu Nishido
    Shin Toyoda
    Kosei Komuro
    Adrian A. Finch
    Martin R. Lee
    Kiyotaka Ninagawa
    [J]. Physics and Chemistry of Minerals, 2013, 40 : 531 - 545
12345