Nickel embedded indium tin oxide anode for flexible organic light-emitting devices

Characteristics of an organic light-emitting diode (OLED) with a structure of Alltris(8-hydroxyquino-line) aluminum (Alq3)/N,N'-bis-(1-naphthyl)-N,N'-diphenyl-1,1'biphenyl-4, 4'-diamine(NPB)/indium tin oxide (ITO)/PET film have been improved by nickel embedded ITO anode. A turn-on voltage of 2.3 V can be reduced with the Ni-embedded OLED. The surface roughness of ITO and Ni is also lowered due to the use of a chemical-mechanical polishing process. The Ni-embedded ITO approach is hence capable of providing better OLED opto-electrical characteristics and improved lifetime at the same time.