Nickel embedded indium tin oxide anode for flexible organic light-emitting devices

被引：0
|
作者：
Hsu, C. M. [1 ]
Chen, Y. S. [1 ]
Tsai, C. L. [1 ]
Wu, W. T. [1 ]
机构：
[1] So Taiwan Univ Technol, Dept Optoelect Engn, Yung Kang 710, Tainan County, Taiwan
来源：
IDW/AD '05: PROCEEDINGS OF THE 12TH INTERNATIONAL DISPLAY WORKSHOPS IN CONJUNCTION WITH ASIA DISPLAY 2005, VOLS 1 AND 2 | 2005年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Characteristics of an organic light-emitting diode (OLED) with a structure of Alltris(8-hydroxyquino-line) aluminum (Alq3)/N,N'-bis-(1-naphthyl)-N,N'-diphenyl-1,1'biphenyl-4, 4'-diamine(NPB)/indium tin oxide (ITO)/PET film have been improved by nickel embedded ITO anode. A turn-on voltage of 2.3 V can be reduced with the Ni-embedded OLED. The surface roughness of ITO and Ni is also lowered due to the use of a chemical-mechanical polishing process. The Ni-embedded ITO approach is hence capable of providing better OLED opto-electrical characteristics and improved lifetime at the same time.
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页码：679 / 682
页数：4
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