Copper metallizations for integrated circuits: TEM analysis and electrical characterization

被引：3
|
作者：
Bruschi, P
Ciofi, C
Dattilo, V
Diligenti, A
Nannini, A
Neri, B
机构：
[1] University of Pisa,Dipartimento di Ingegneria dell’Informazione: Elettronica, Informatica, Telecomunicazioni
来源：
JOURNAL OF ELECTRONIC MATERIALS | 1997年 / 26卷 / 08期
关键词：
copper; interconnections; noise; reliability;
D O I：
10.1007/s11664-997-0283-5
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Copper thin films have been deposited by means of three different techniques. Transmission electron microscopy analysis and electrical characterization revealed that the three types of film had different average grain size and resistivity. The two different contributions to the total resistivity, due to the scattering at the grain boundaries and at the intragranular defects, have been separated by using the Mayadas-Shatzkes theory. Microstructural analysis, electrical characterization, noise measurements, and lifetime tests have been performed in order to identify the deposition technique which leads to the most reliable interconnection lines.
引用
收藏
页码：L17 / L20
页数：4
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