The role of defects in solar cells: Control and detection Defects in solar cells

被引:0
|
作者
Duenas, Salvador [1 ]
Perez, E. [1 ]
Castan, H. [1 ]
Garcia, H. [1 ]
Bailon, L. [1 ]
机构
[1] Univ Valladolid, Dept Elect & Elect, ETSI Telecomunicac, Valladolid, Spain
关键词
solar cell; defects; intermediate band; quantum efficiency; electrical characterization; SILICON; TITANIUM;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The performance of commercial solar cells is strongly controlled by the impurities and defects present in the substrates. Defects induce deep energy levels in the semiconductor bandgap, which degrade the carrier lifetime and quantum efficiency of solar cells. A comprehensive knowledge of the properties of defects require electrical characterization techniques providing information about the defect concentration, spatial distribution and physical origin. The experimental techniques available in our laboratory are described in this work. In contrast, the efficiency of single junction solar cells can be drastically improved by the formation of an intermediate band in the midgap of a semiconductor. The intermediate band can be created from deep level defects if their concentration is high enough. Experimental results proving the intermediate band formation are also presented in this work.
引用
收藏
页码:301 / 304
页数:4
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