Diode-pumped passively Q-switched Nd:GdVO4 laser with a Cr4+: YAG crystal as the saturable absorber

被引：0
|
作者：
Li, C [1 ]
Ueda, K [1 ]
机构：
[1] Univ Electrocommun, Inst Laser Sci, Chofu, Tokyo 182, Japan
来源：
ADVANCED SOLID STATE LASERS, PROCEEDINGS | 2000年 / 34卷
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中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We demonstrated the first diode-pumped passively Q-switched Nd:GdVO4 laser using Cr4+:NAG as the saturable absorber and obtained 1.38 W average power when the incident pump power was 8.0 W. (C) 1999 Optical Society of America.
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页码：121 / 123
页数：3
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