Fano effect and Kondo effect in quantum dots formed in strongly coupled quantum wells

被引：15

作者：

Rushforth, AW ^{[1
]}

Smith, CG ^{[1
]}

Farrer, I ^{[1
]}

Ritchie, DA ^{[1
]}

Jones, GAC ^{[1
]}

Anderson, D ^{[1
]}

Pepper, M ^{[1
]}

机构：

[1] Univ Cambridge, Cavendish Lab, Cambridge CB3 0HE, England

来源：

PHYSICAL REVIEW B | 2006年 / 73卷 / 08期

基金：

英国工程与自然科学研究理事会;

关键词：

D O I：

10.1103/PhysRevB.73.081305

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We present lateral transport measurements on strongly, vertically coupled quantum dots formed in separate quantum wells in a GaAs/AlxGa1-xAs heterostructure. Coulomb oscillations are observed forming a honeycomb lattice consistent with two strongly coupled dots. When the tunnel barriers in the upper well are reduced we observe the Fano effect due to the interfering paths through a resonant state in the lower well and a continuum state in the upper well. In both regimes an in-plane magnetic field reduces the coupling between the wells when the magnetic length is comparable to the center to center separation of the wells. We also observe the Kondo effect, which allows the spin states of the double dot system to be probed.

引用

页数：4

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