Noise characteristics of the Fano effect and the Fano-Kondo effect in triple quantum dots

被引:6
|
作者
Tanamoto, T. [1 ]
Nishi, Y. [1 ]
Fujita, S. [1 ]
机构
[1] Toshiba Co Ltd, Corp R&D Ctr, Adv LSI Lab, Saiwai Ku, Kawasaki, Kanagawa 2128582, Japan
关键词
TRANSPORT; VALENCE;
D O I
10.1088/0953-8984/21/14/145501
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
We theoretically compare transport properties of the Fano-Kondo effect with those of the Fano effect, focusing on the effect of a two-level state in a triple quantum dot (QD) system. We analyze shot noise characteristics in the Fano-Kondo region at zero temperature, and discuss the effect of strong electronic correlation in QDs. We found that the modulation of the Fano dip is strongly affected by the on-site Coulomb interaction in QDs, and stronger Coulomb interaction (Fano-Kondo case) induces larger noise.
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收藏
页数:5
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