Switching Controllability of High Voltage GaN-HEMTs and The Cascode Connection

被引：0

作者：

Saito, Wataru ^{[1
]}

Saito, Yasunobu ^{[1
]}

Fujimoto, Hidetoshi ^{[1
]}

Yoshioka, Akira ^{[1
]}

Ohno, Tetsuya ^{[1
]}

Naka, Toshiyuki ^{[1
]}

Sugiyama, Toru ^{[1
]}

机构：

[1] Toshiba Co Ltd, Semicond & Storage Prod Co, Kawasaki, Kanagawa 210, Japan

来源：

2012 24TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD) | 2012年

关键词：

GaN-HEMTs; Switching Behavior; Gate Controllability; OPERATION; HFETS; GATE;

D O I：

暂无

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

This paper reports that the switching controllability of high-voltage GaN-HEMTs and the cascode connection depends on the feedback capacitance design. The switching behavior of the GaN-HEMT can be controlled by the external gate resistance as the same manner as the conventional Si-MOSFETs. The switching controllability was improved by the substrate connection due to the parasitic capacitance change. The controllability of the cascode connection was slightly worse compared with the Si-MOSFET, because the effective feedback capacitance became small by the step by step switching operation.

引用

页码：229 / 232

页数：4

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