Phosphorus gettering of iron by screen-printed emitters in monocrystalline Czochralski silicon wafers

被引：1
|
作者：
Pletzer, Tobias M. [1 ]
Suckow, Stephan [1 ]
Stegemann, Elmar F. R. [2 ]
Windgassen, Horst [1 ]
Baetzner, Derk L. [3 ]
Kurz, Heinrich [1 ]
机构：
[1] Univ Aachen, Rhein Westfal TH Aachen, Inst Semicond Elect, D-52074 Aachen, Germany
[2] OT Thalheim, Q Cells SE, D-06766 Bitterfeld, Germany
[3] Roth & Rau Switzerland AG, CH-2000 Neuchatel, Switzerland
来源：
PROGRESS IN PHOTOVOLTAICS | 2013年 / 21卷 / 05期
关键词：
gettering; iron concentration; screen-printing; phosphorus doping paste; monocrystalline Czochralski silicon; MINORITY-CARRIER LIFETIME; CRYSTALLINE SILICON;
D O I：
10.1002/pip.2175
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
In this paper, we demonstrate single-sided screen-printed emitters in thin monocrystalline Czochralski silicon (Cz-Si) wafers with an improved gettering of iron compared with conventional double-sided POCl3 emitters. The phosphorus dopant pastes used have to be chosen carefully to provide a sufficiently low emitter sheet resistance and to avoid iron contamination. The iron concentration is determined in a non-destructive way from the minority carrier lifetime obtained by quasi-steady-state photoconductance measurements, down to levels not yet demonstrated for screen-printed emitters. In addition, the well-known metastable boron-oxygen complexes in Cz-Si have been transferred into a stable state by light-induced degradation prior to these measurements. Copyright (c) 2012 John Wiley & Sons, Ltd.
引用
收藏
页码：900 / 905
页数：6
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