Dielectric Properties of Erbium doped Alkali Boro Bismuth Tellurite Glasses

The glass composition of xEr(2)O(3)-(20-x)Li2O-10Bi(2)O(3)-20TeO(2)-50B(2)O(3) (x = 0, 0.1, 0.5, 1.0, 1.5 and 2.0 mol%, labelled as LBT0, LBT1, LBT2, LBT3, LBT4 and LBT5, respectively) have been successfully prepared by conventional melt quenching method and investigated their conduction mechanism and dielectric relaxation behavior using complex permittivity and discussed with respect to concentration of Er2O3 and temperature. The Bergman modified KWW function shows the relaxation process is of non-Debye type. The stretched exponent beta is found to be insensitive to the variation of both temperature and composition. The values of beta lie in the range 0.39-0.44, which also indicates the presence of non-Debye type relaxation behavior in the present studied glasses. In spite of conduction mechanism, the scaling behavior is also evaluated, which confirms that, the conduction mechanism is completely temperature and composition independent in the prepared glass samples. These results could be indicated that the studied glasses having prominent applications in solid state devices application.