Structural investigation of GaAs1-xBix/GaAs multiquantum wells

被引：56
|
作者：
Tominaga, Yoriko [1 ]
Kinoshita, Yusuke [1 ]
Oe, Kunishige [1 ]
Yoshimoto, Masahiro [1 ]
机构：
[1] Kyoto Inst Technol, Dept Elect, Sakyo Ku, Kyoto 6068585, Japan
来源：
APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 13期
基金：
日本科学技术振兴机构;
关键词：
D O I：
10.1063/1.2993343
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
GaAs(1-x)Bi(x)/GaAs multiquantum wells (MQWs) have been grown in the layer-by-layer mode of molecular beam epitaxy. A well-defined multilayered structure of the MQWs has been confirmed by cross-sectional transmission microscopy and high-resolution x-ray diffraction measurements. Photoluminescence has been observed from GaAs(1-x)Bi(x)/GaAs MQW at room temperature. The MQW structures have been confirmed to be thermally stable even after annealing up to 800 C, although they need to be grown at a low temperature (350-400 C degrees) for Bi incorporation. (C) 2008 American Institute of Physics.
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页数：3
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