GaNAsSb material for ultrafast microwave photoconductive switching application

被引：9

作者：

Tan, K. H. ^{[1
]}

Yoon, S. F. ^{[1
]}

Tripon-Canseliet, C. ^{[2
]}

Loke, W. K. ^{[1
]}

Wicaksono, S. ^{[1
]}

Faci, S. ^{[2
]}

Saadsaoud, N. ^{[3
]}

Lampin, J. F. ^{[3
]}

Decoster, D. ^{[3
]}

Chazelas, J. ^{[4
]}

机构：

[1] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore

[2] Univ Paris 06, Lab Elect & Electromagnetisme, F-94200 Ivry, France

[3] Univ Sci & Technol Lille, CNRS, UMR 8520, IEMN, F-59652 Villeneuve Dascq, France

[4] Thales Airborne Syst, F-78852 Elancourt, France

来源：

APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 06期

关键词：

D O I：

10.1063/1.2971204

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report a photoconductive switch with GaNAsSb as active material for microwave switching application. The GaNAsSb layer was grown by molecular beam epitaxy in conjunction with a rf plasma-assisted nitrogen source and a valved antimony cracker source. The 0.5 mu m thick GaNAsSb photoabsorption layer contains 3.5% of N and 9% of Sb. The switch exhibits pulsed response with full width at half maximum of 30 ps and photoresponse of up to 1.6 mu m. In microwave switching application, the switch shows ON/OFF ratio of 11 dB at 1 GHz and response up to 15 GHz. (C) 2008 American Institute of Physics.

引用

页数：3

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