Results on double-sided ac-coupled silicon strip detectors

被引：1

作者：

Batignani, G

Bosisio, L

Dellamarina, R

Elmer, P

Forti, F

Giorgi, MA

Rampino, G

Rizzo, G

Tritto, S

机构：

[1] UNIV PISA, PISA, ITALY

[2] IST NAZL FIS NUCL, TRIESTE, ITALY

[3] UNIV TRIESTE, TRIESTE, ITALY

[4] UNIV WISCONSIN, MADISON, WI USA

来源：

NUOVO CIMENTO DELLA SOCIETA ITALIANA DI FISICA A-NUCLEI PARTICLES AND FIELDS | 1996年 / 109卷 / 09期

关键词：

D O I：

10.1007/BF02773518

中图分类号：

O412 [相对论、场论]; O572.2 [粒子物理学];

学科分类号：

摘要：

We have designed and fabricated double-sided a.c.-coupled silicon strip detectors on high-resistivity substrates. We discuss the first electrical measurements on a 16 cm(2) strip detector. These detectors are biased via polysilicon resistors on both sides and the decoupling capacitors are integrated on the strip themselves. For a large fraction of the fabricated detectors, the current densities are about 15 nA/cm(2) and the yield of the integrated capacitor is about 99%, without any sign of breakdown up to 100 V (the maximum voltage we have applied).

引用

页码：1319 / 1332

页数：14

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