Carrier Dynamics Analysis in Metal-Semiconductor-Metal Device for mid-IR Silicon Photonics

被引：0
|
作者：
Hui, Alvin Tak Lok [1 ]
Ding, Yunhong [1 ]
Hu, Hao [1 ]
Galili, Michael [1 ]
机构：
[1] Tech Univ Denmark, Dept Photon Engn DTU Foton, Lyngby, Denmark
来源：
2017 IEEE 14TH INTERNATIONAL CONFERENCE ON GROUP IV PHOTONICS (GFP) | 2017年
关键词：
silicon photonics; active carrier removal; metal-semiconductor-metal; carrier lifetime;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A modelling platform for active carrier removal based on metal-semiconductor-metal structure is reported on analysis of carrier dynamics. The analysis reveals electric current hot spots exist in geometric singularities and curly trajectory of carriers should be considered when accurately estimating the effective carrier lifetime.
引用
收藏
页码：69 / 70
页数：2
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