GaN drift-layer thickness effects in vertical Schottky barrier diodes on free-standing HVPE GaN substrates

被引：15

作者：

Sandupatla, A. ^{[1
]}

Arulkumaran, S. ^{[2
,3
]}

Ng, G. I. ^{[1
,2
]}

Ranjan, K. ^{[1
,2
]}

Deki, M. ^{[3
]}

Nitta, S. ^{[3
]}

Honda, Y. ^{[3
]}

Amano, H. ^{[3
]}

机构：

[1] Nanyang Technol Univ, Sch Elect & Elect Engn, 50 Nanyang Ave, Singapore 639798, Singapore

[2] Nanyang Technol Univ, Temasek Labs NTU, Res Techno Plaza,50 Nanyang Dr, Singapore 637553, Singapore

[3] Nagoya Univ, CIRFE, Inst Mat & Syst Sustainabil IMaSS, Nagoya, Aichi 4648603, Japan

来源：

AIP ADVANCES | 2019年 / 9卷 / 04期

关键词：

III-V semiconductors - Gallium nitride - Metallorganic chemical vapor deposition;

D O I：

10.1063/1.5087491

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Vertical Schottky barrier diodes (SBD) with different drift-layer thicknesses (DLT) of GaN up to 30 mu m grown by metalorganic chemical vapour deposition (MOCVD) were fabricated on free-standing GaN grown by hydride vapour phase epitaxy (HVPE). At room temperature, SBD's exhibited average barrier heights (Phi(B)) in the range of 0.73 eV to 0.81 eV. The effective barrier heights (Phi(Beff)) of SBDs with different DLT also exhibited a similar range of Phi(B) measured at room temperature. The measured reverse breakdown voltages (V-BD) of SBDs increased from 562 V to 2400 V with an increase in DLT. The observation of high VBD of SBDs could be due to the lower effective donor concentration (7.6x10(14) /cm(3)), which was measured from SIMS analysis. The measured VBD of 2400 V is the highest value ever reported for a 30 mu m DLT vertical GaN SBD without additional edge termination or field plate (FP). (C) 2019 Author(s).

引用

页数：5

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