Modeling of silicon epitaxial growth with SiHCl3 in a CVD barrel reactor at atmospheric pressure

The growth rate of epitaxial Si in a chemical vapor deposition barrel reactor was investigated. Trichlorosilane was employed as a precursor diluted in H-2 carrier gas at 1 atm reactor pressure. The growth rates and the fluid dynamics were analyzed using a software package, ESTET. A new complete chemical model was introduced considering chemical reactions in the gas phase and on the solid surfaces. Finally, the predictive growth rate given by this model was in a good agreement with experimental results for different positions of the wafer on the support and for several operating conditions.