Various effects of silicidation on shallow p+ junctions formed by BF2+ implantation into thin poly-Si films on Si substrates

被引：0
|
作者：
Juang, MH [1 ]
机构：
[1] Natl Taiwan Univ Sci & Technol, Dept Elect Engn, Taipei, Taiwan
来源：
IEEE ELECTRON DEVICE LETTERS | 1999年 / 20卷 / 07期
关键词：
D O I：
10.1109/55.772372
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Various effects of silicidation on shallow p(+)n junctions formed by the scheme that implants BF2+ ions into thin poly-Si films on Si substrates are described. A post-Ni silicidation just slightly improves the preformed junctions of the annealed sample. However, as the sample is first deposited with thin Ni films after the implantation and then annealed, the resulting junctions are much better than the preformed ones. Moreover, as the sample is deposited with Ti films, the resultant junctions are just slightly better the preformed ones.
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页码：348 / 350
页数：3
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