The role of N-2 in aspect-ratio-dependent etching of SiO2

被引：1
|
作者：
Buie, MJ
Joshi, AM
Regis, J
机构：
[1] Applied Materials, Incorporated, MxP/RPS Dielectric Etch, Santa Clara
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1997年 / 144卷 / 11期
关键词：
D O I：
10.1149/1.1838114
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
We report mechanistic study of the role of nitrogen in reducing aspect-ratio-dependent etching when added to a mixture of hydrocarbon and fluorocarbon gases in a magnetically enhanced reactive ion etcher. Through examination of ion and neutral transport phenomenon, reactant transport issues, and surface charging, the source of aspect-ratio-dependent etching was identified for the CHF3/CF4/Ar etch chemistry processes investigated. The total flow of CHF3 + CF4 was held constant at 30 sccm. Polymerization was found to be the primary source of aspect-ratio-dependent etching. The addition of nitrogen is investigated with respect to its impact on etch and deposition rates.
引用
收藏
页码：3935 / 3939
页数：5
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