Angular dependence of giant magnetoresistance in magnetic multilayers

被引:34
|
作者
Barnas, J
Baksalary, O
Fert, A
机构
[1] THOMSON CSF,CNRS,UNITE MIXTE PHYS,F-91404 ORSAY,FRANCE
[2] ADAM MICKIEWICZ UNIV POZNAN,INST PHYS,MAGNETISM THEORY DIV,PL-60769 POZNAN,POLAND
来源
PHYSICAL REVIEW B | 1997年 / 56卷 / 10期
关键词
D O I
10.1103/PhysRevB.56.6079
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Dependence of the current-in-plane giant magnetoresistance (GMR) in magnetic multilayers on the angle phi between the magnetizations of successive magnetic films is analyzed theoretically in the quasiclassical and quantum limits. Spin dependent electron scattering on impurities as well as on interfacial roughness is taken into account. In the quasiclassical limit GMR is shown to vary approximately linearly with sin(2)(phi/2). In the quantum limit the linear behavior occurs only for symmetrical structures with a crystal electronic potential independent of the electron spin orientation. Deviations from the linear behavior occur when either the crystal potential is spin dependent or the structure is asymmetrical.
引用
收藏
页码:6079 / 6085
页数:7
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