Bismuth catalyzed growth of silicon nanowires by electron beam evaporation

被引：14
|
作者：
Kumar, R. Rakesh [1 ]
Rao, K. Narasimha [1 ]
Phani, A. R. [2 ]
机构：
[1] Indian Inst Sci, Dept Instrumentat & Appl Phys, Bangalore 560012, Karnataka, India
[2] Nanores Adv Mat & Technol, Bangalore 560040, Karnataka, India
来源：
MATERIALS LETTERS | 2012年 / 82卷
关键词：
Semiconductors; Silicon nanowires; Bismuth catalyst; Electron beam evaporation; Thin films; KINETICS;
D O I：
10.1016/j.matlet.2012.05.090
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Silicon nanowires (NWs) have been grown in the vapor phase for the first time with bismuth (Bi) as a catalyst using the electron beam evaporation method at a low substrate temperature of 280 degrees C. The grown Si nanowires were randomly oriented on the substrate with an average length of 900 nm for a deposition time of 15 min. Bi faceted nanoparticles (crowned) at the end of the grown Si nanowires have been observed and attributed to the Vapor-Liquid-Solid (VLS) growth mechanism. Transmission Electron Microscopy analysis on the nanowires revealed their single crystalline nature and interestingly bismuth particles were observed in Si nanowires. The obtained results have shown a new window for Si nanowires growth with bismuth as a catalyst. (C) 2012 Elsevier B.V. All rights reserved.
引用
收藏
页码：163 / 166
页数：4
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