Voltage-Impulse-Induced Non-Volatile Ferroelastic Switching of Ferromagnetic Resonance for Reconfigurable Magnetoelectric Microwave Devices

被引：215
|
作者：
Liu, Ming [1 ]
Howe, Brandon M. [1 ]
Grazulis, Lawrence [1 ]
Mahalingam, Krishnamurthy [1 ]
Nan, Tianxiang [2 ]
Sun, Nian X. [2 ]
Brown, Gail J. [1 ]
机构：
[1] Air Force Res Lab, Mat & Mfg Directorate, Wright Patterson AFB, OH 45433 USA
[2] Northeastern Univ, Dept Elect & Comp Engn, Boston, MA 02115 USA
来源：
ADVANCED MATERIALS | 2013年 / 25卷 / 35期
关键词：
multiferroics; magnetoelectric composites; microwave devices; non-volatile; THIN-FILMS; ROOM-TEMPERATURE; EXCHANGE BIAS; HETEROSTRUCTURES; MULTIFERROICS; COMPOSITES; MEMORY; MAGNETORESISTANCE; FUTURE;
D O I：
10.1002/adma.201301989
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
A critical challenge in realizing magnetoelectrics based on reconfigurable microwave devices, which is the ability to switch between distinct ferromagnetic resonances (FMR) in a stable, reversible and energy efficient manner, has been addressed. In particular, a voltage-impulse-induced two-step ferroelastic switching pathway can be used to in situ manipulate the magnetic anisotropy and enable non-volatile FMR tuning in FeCoB/PMN-PT (011) multiferroic heterostructures. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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收藏
页码：4886 / 4892
页数：7
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