Admittance spectroscopy of Mg-doped GaN grown by molecular beam epitaxy using RF nitrogen sources

被引：0

作者：

Kim, DJ ^{[1
]}

Ryu, DY

Kim, KH

Bojarczuk, NA

Karasinski, J

Guha, S

Lee, HG

机构：

[1] Chungnam Natl Univ, Sch Mat Engn, Taejon 305764, South Korea

[2] IBM Corp, Div Res, Yorktown Hts, NY 10598 USA

[3] Chungbuk Natl Univ, Sch Elect & Elect Engn, Chongju 360763, South Korea

来源：

JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 1999年 / 34卷

关键词：

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Thermal activation energies of Mg in GaN grown using RF nitrogen source with varying hag flux were examined using an admittance spectroscopy technique. There was no noticeable difference or trend in the activation energy with varying MB flux. The thermal activation energy for GaN:Mg was similar to 115 meV under the investigated Mg flux range. Negligible persistent photo-conductivity and yellow luminescence peak in PL observed in the samples suggest possible reduction of the thermal activation energies compared to the values in the literature.

引用

页码：S261 / S264

页数：4

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