Enhanced performance of ultraviolet organic light-emitting diode by using graphene oxide and MoO3 dual hole injection layer

被引:5
|
作者
Liu, Liming [1 ]
You, Fengjiao [2 ,3 ]
Zheng, Qinghong [2 ,3 ]
Mo, Bingjie [2 ,3 ]
Zeng, Baoqing [1 ]
Wang, Honghang [4 ]
Zhang, Xiaowen [2 ,3 ]
Wei, Bin [5 ]
机构
[1] Univ Elect Sci & Technol China, Sch Phys Elect, Chengdu 610054, Peoples R China
[2] Guilin Univ Elect Technol, Guangxi Key Lab Informat Mat, Guilin 541004, Peoples R China
[3] Guilin Univ Elect Technol, Sch Mat Sci & Engn, Guilin 541004, Peoples R China
[4] Univ Elect Sci & Technol China, Zhongshan Inst, Zhongshan Branch, State Key Lab Elect Thin Films & Integrated Devic, Zhongshan 528402, Peoples R China
[5] Shanghai Univ, Key Lab Adv Display & Syst Applicat, Minist Educ, Shanghai 200072, Peoples R China
基金
中国国家自然科学基金; 中国博士后科学基金;
关键词
organic light-emitting diodes; ultraviolet emission; hole injection; graphene oxide; MoO3; ELECTRONIC-STRUCTURE; ELECTROLUMINESCENCE; VOLTAGE; DEVICES; EFFICIENCY; STABILITY; INTENSE; METAL;
D O I
10.1002/pssc.201600131
中图分类号
O59 [应用物理学];
学科分类号
摘要
A dual hole injection layer (d-HIL) composed of graphene oxide (GO) and transition metal oxide MoO3 is constructed and proven to be effectively promotes the radiance and external quantum efficiency (EQE) of ultraviolet organic light-emitting diode (UV OLED). The device with d-HIL behaves a maximum radiance of 4.7 mW/cm(2) at 237.5 mA/cm(2) and EQE of 1.36% at 3.75 mA/cm(2), which have been enhanced by 27% and 19%, respectively, in comparison with the counterpart using conventional MoO3 single HIL. The ultraviolet photoelectron spectroscopy elucidates that GO/MoO3 modification to the greatest extent enhances work function. The current-voltage characteristics and impedance spectroscopy of Hole-only devices clarify that GO/MoO3 d-HIL considerably promotes hole injection capacity. Our results indicate that the d-HIL of GO/MoO3 paves a way for constructing efficient UV OLED. (c) 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
引用
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页数:6
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